The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?
Journal articles
Losurdo, M; Capezzuto, P; Bruno, G; Namkoong, G; Doouttle, WA; Brown, AS
Published in: Physica Status Solidi (A) Applied Research
2001
The effect of c-plane sapphire nitridation upon exposure to a rf N2 plasma at temperatures in the range 100-700°C on the quality of GaN epilayers grown by MBE is investigated. A homogeneous A1N layer is formed at 200°C. Nitridation at higher temperatures causes rough and non-homogeneous nitridated layer including both AlN and NO. Lowering the nitridation temperature to 200°C results in the improvement of the GaN structural and photoluminescence properties. The results are interpreted in the framework of a chemical model based on the competition between formation of AlN and NO whose adsorption/desorption equilibrium on the sapphire surface strongly depends on temperature.
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Published In
Physica Status Solidi (A) Applied Research
DOI
Publication Date
2001
Volume
188
Issue
2
Start / End Page
561 / 565
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
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Losurdo, M., Capezzuto, P., Bruno, G., Namkoong, G., Doouttle, W. A., & Brown, A. S. (2001). The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation? Physica Status Solidi (A) Applied Research, 188(2), 561–565. https://doi.org/10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J
Losurdo, M., P. Capezzuto, G. Bruno, G. Namkoong, W. A. Doouttle, and A. S. Brown. “The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?” Physica Status Solidi (A) Applied Research 188, no. 2 (2001): 561–65. https://doi.org/10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J.
Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doouttle WA, Brown AS. The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation? Physica Status Solidi (A) Applied Research. 2001;188(2):561–5.
Losurdo, M., et al. “The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?” Physica Status Solidi (A) Applied Research, vol. 188, no. 2, 2001, pp. 561–65. Scival, doi:10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J.
Losurdo M, Capezzuto P, Bruno G, Namkoong G, Doouttle WA, Brown AS. The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation? Physica Status Solidi (A) Applied Research. 2001;188(2):561–565.
Published In
Physica Status Solidi (A) Applied Research
DOI
Publication Date
2001
Volume
188
Issue
2
Start / End Page
561 / 565
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics