DC and RF performance of 0.1 μm gate length Al.48In.52As-Ga.38In.62As pseudomorphic HEMT's
Mishra, UK; Brown, AS; Rosenbaum, SE
Published in: Technical Digest International Electron Devices Meeting
The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1-μm gate length HEMTs using pseudomorphic Al0.48In0.52As-Ga0.38In0.62As modulation-doped epitaxial layers and compared them with lattice-matched Al0.48In0.52As-Ga0.47In0.53As HEMTs. The pseudomorphic HEMTs demonstrated an external fT (current-gain cutoff frequency) of 205 GHz, which is the first demonstration of a transistor with an fT > 200 GHz. The V-band noise figure of an amplifier built with the lattice-matched, pseudomorphic HEMTs was 1.3 dB and 1.5 dB, respectively. The associated gain was 9.5 dB and 8.0 dB, respectively.
