A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
Publication
, Journal Article
Fair, RB; Tsai, JCC
Published in: Journal of the Electrochemical Society
January 1, 1978
Duke Scholars
Published In
Journal of the Electrochemical Society
DOI
EISSN
1945-7111
ISSN
0013-4651
Publication Date
January 1, 1978
Volume
125
Issue
6
Start / End Page
995 / 997
Related Subject Headings
- Energy
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B., & Tsai, J. C. C. (1978). A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. Journal of the Electrochemical Society, 125(6), 995–997. https://doi.org/10.1149/1.2131608
Fair, R. B., and J. C. C. Tsai. “A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect.” Journal of the Electrochemical Society 125, no. 6 (January 1, 1978): 995–97. https://doi.org/10.1149/1.2131608.
Fair RB, Tsai JCC. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. Journal of the Electrochemical Society. 1978 Jan 1;125(6):995–7.
Fair, R. B., and J. C. C. Tsai. “A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect.” Journal of the Electrochemical Society, vol. 125, no. 6, Jan. 1978, pp. 995–97. Scopus, doi:10.1149/1.2131608.
Fair RB, Tsai JCC. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. Journal of the Electrochemical Society. 1978 Jan 1;125(6):995–997.
Published In
Journal of the Electrochemical Society
DOI
EISSN
1945-7111
ISSN
0013-4651
Publication Date
January 1, 1978
Volume
125
Issue
6
Start / End Page
995 / 997
Related Subject Headings
- Energy
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry