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Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission

Publication ,  Journal Article
Fair, RB; Sun, RC
Published in: IEEE Transactions on Electron Devices
January 1, 1981

Hydrogen introduced and trapped in the gate oxide of MOSFET's by the silicon-nitride capping process can be activated by emitted holes from the MOSFET channel to produce a large threshold-voltage shift. This effect requires avalanche multiplication in the channel for the production of holes when a dc voltage is applied to the gate. For the pulsed-gate case, the magnitude of the threshold-voltage shift depends significantly on the gate-pulse fall time, cycle time, and duty cycle. In both cases the electric field normal to the Si/SiO2 interface near the drain aids the emission of holes across that interface. A, semiquantitative model is proposed which says that holes can recombine at H2 molecules and release sufficient energy to cause dissociation. The atomic hydrogen created can participate in electrochemical reactions at the gate oxide/channel interface which create nonuniform distributions of trapped charge and interface states along the channel. Model calculations of the time, temperature, and voltage dependences of this threshold instability agree well with measured results. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.

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Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1981

Volume

28

Issue

1

Start / End Page

83 / 94

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Fair, R. B., & Sun, R. C. (1981). Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission. IEEE Transactions on Electron Devices, 28(1), 83–94. https://doi.org/10.1109/T-ED.1981.20287
Fair, R. B., and R. C. Sun. “Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission.” IEEE Transactions on Electron Devices 28, no. 1 (January 1, 1981): 83–94. https://doi.org/10.1109/T-ED.1981.20287.
Fair RB, Sun RC. Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission. IEEE Transactions on Electron Devices. 1981 Jan 1;28(1):83–94.
Fair, R. B., and R. C. Sun. “Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission.” IEEE Transactions on Electron Devices, vol. 28, no. 1, Jan. 1981, pp. 83–94. Scopus, doi:10.1109/T-ED.1981.20287.
Fair RB, Sun RC. Threshold-Voltage Instability in MOSFET's Due to Channel Hot-Hole Emission. IEEE Transactions on Electron Devices. 1981 Jan 1;28(1):83–94.

Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1981

Volume

28

Issue

1

Start / End Page

83 / 94

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering