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OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters

Publication ,  Journal Article
Fair, RB
Published in: IEEE Transactions on Electron Devices
January 1, 1973

The influence of As surface concentration CsE on the emitter efficiency βϒ and the temperature dependence of βϒ are reported. The theoretical model that is used to explain the variation ofβϒ with CSE is based upon the difference in the effective energy bandgaps in the emitter and base regions ΔEg. Experimental measurements of ΔEg versus CSE are presented. Measurements of β, versus CSE show that the effective emitter doping density QE/X5 reaches a maximum value at CSE≌1.5 × 1020 atoms /cm3, corresponding to the threshold above which ΔEg>0. For the case of a constan: active base doping/em2 QB, this also corresponds to an optimum ir. the emitter efficiency βϒ. However, it is shown that in typical sequential diffusion processing of transistors, βϒ increases monotonically with CBE because QB =QB(CSE) decreases. In addition, for devices fabricated in this study, Δβ/ ΔCSE at CSE = 2 × 1020 atoms/ cm3 for As-diffused emitters (doped oxide) was≈ 5 times greater than for ion-implanted-diffused As emitters, showing the superiority of implantation in controlling gain. Finally, transistors that were made with [ommited formula]. © 1973, IEEE. All rights reserved.

Duke Scholars

Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1973

Volume

20

Issue

7

Start / End Page

642 / 647

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Fair, R. B. (1973). OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters. IEEE Transactions on Electron Devices, 20(7), 642–647. https://doi.org/10.1109/T-ED.1973.17716
Fair, R. B. “OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters.” IEEE Transactions on Electron Devices 20, no. 7 (January 1, 1973): 642–47. https://doi.org/10.1109/T-ED.1973.17716.
Fair RB. OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters. IEEE Transactions on Electron Devices. 1973 Jan 1;20(7):642–7.
Fair, R. B. “OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters.” IEEE Transactions on Electron Devices, vol. 20, no. 7, Jan. 1973, pp. 642–47. Scopus, doi:10.1109/T-ED.1973.17716.
Fair RB. OPtimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters. IEEE Transactions on Electron Devices. 1973 Jan 1;20(7):642–647.

Published In

IEEE Transactions on Electron Devices

DOI

EISSN

1557-9646

ISSN

0018-9383

Publication Date

January 1, 1973

Volume

20

Issue

7

Start / End Page

642 / 647

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering