Harmonic Distortion in the Junction Fieldeffect Transistor with Field-Dependent Mobility

It has been found that a harmonic analysis of the usual power-law transfer characteristic of the JFET does not yield equations which accurately predict the third-harmonic distortion products for short-gate structures. However, if field-dependent mobility in the drain-source channel is taken into consideration in the equations for the drain current, a transfer characteristic is obtained of the form 3ZD(1- e-r)/Γ2where ZD is the normalized channel height and r is the field factor. Equations for the distortion products M2 and M3, which are derived from this type of characteristic, accurately predict M2 and M3 for actual devices as a function of physical parameters. Lower limits on the values of M2 and M3 which can be achieved in a practical JFET are presented. © 1972, IEEE. All rights reserved.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering