Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin
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Xu, W; Zhang, T; Chen, Y
Published in: Proceedings - IEEE International Symposium on Circuits and Systems
September 19, 2008
This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell uses a pair of differential MTJs as basic storage element and incorporates transistors to greatly improve the cell search noise margin at low sensing current. Using the same design principle, we further develop an area-efficient cell structure for ternary CAM (TCAM), which occupies about 25% less area compared with directly using two CAM cells to form one TCAM cell. The effectiveness of the proposed CAM and TCAM cell structures has been demonstrated by circuit simulation at 0.18μm CMOS technology. ©2008 IEEE.
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Proceedings - IEEE International Symposium on Circuits and Systems
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0271-4310
Publication Date
September 19, 2008
Start / End Page
1898 / 1901
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Xu, W., Zhang, T., & Chen, Y. (2008). Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin. In Proceedings - IEEE International Symposium on Circuits and Systems (pp. 1898–1901). https://doi.org/10.1109/ISCAS.2008.4541813
Xu, W., T. Zhang, and Y. Chen. “Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin.” In Proceedings - IEEE International Symposium on Circuits and Systems, 1898–1901, 2008. https://doi.org/10.1109/ISCAS.2008.4541813.
Xu W, Zhang T, Chen Y. Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin. In: Proceedings - IEEE International Symposium on Circuits and Systems. 2008. p. 1898–901.
Xu, W., et al. “Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin.” Proceedings - IEEE International Symposium on Circuits and Systems, 2008, pp. 1898–901. Scopus, doi:10.1109/ISCAS.2008.4541813.
Xu W, Zhang T, Chen Y. Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin. Proceedings - IEEE International Symposium on Circuits and Systems. 2008. p. 1898–1901.
Published In
Proceedings - IEEE International Symposium on Circuits and Systems
DOI
ISSN
0271-4310
Publication Date
September 19, 2008
Start / End Page
1898 / 1901