A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration
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Plouchart, JO; Wang, F; Balteanu, A; Parker, B; Sanduleanu, MAT; Yeck, M; Chen, VHC; Woods, W; Sadhu, B; Valdes-Garcia, A; Li, X; Friedman, D
Published in: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
November 25, 2015
A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.
Duke Scholars
Published In
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
DOI
ISSN
1529-2517
Publication Date
November 25, 2015
Volume
2015-November
Start / End Page
319 / 322
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Plouchart, J. O., Wang, F., Balteanu, A., Parker, B., Sanduleanu, M. A. T., Yeck, M., … Friedman, D. (2015). A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration. In Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium (Vol. 2015-November, pp. 319–322). https://doi.org/10.1109/RFIC.2015.7337769
Plouchart, J. O., F. Wang, A. Balteanu, B. Parker, M. A. T. Sanduleanu, M. Yeck, V. H. C. Chen, et al. “A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration.” In Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 2015-November:319–22, 2015. https://doi.org/10.1109/RFIC.2015.7337769.
Plouchart JO, Wang F, Balteanu A, Parker B, Sanduleanu MAT, Yeck M, et al. A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration. In: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. 2015. p. 319–22.
Plouchart, J. O., et al. “A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration.” Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, vol. 2015-November, 2015, pp. 319–22. Scopus, doi:10.1109/RFIC.2015.7337769.
Plouchart JO, Wang F, Balteanu A, Parker B, Sanduleanu MAT, Yeck M, Chen VHC, Woods W, Sadhu B, Valdes-Garcia A, Li X, Friedman D. A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. 2015. p. 319–322.
Published In
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
DOI
ISSN
1529-2517
Publication Date
November 25, 2015
Volume
2015-November
Start / End Page
319 / 322