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Compact Modeling: Principles, Techniques and Applications

Surface-potential-based compact model of bulk MOSFET

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Gildenblat, G; Wu, W; Li, X; Van Langevelde, R; Scholten, AJ; Smit, GDJ; Klaassen, DBM
December 1, 2010

We review surface-potential-based approach to compact modeling of bulk MOS transistors and provide introduction to the widely used PSP model jointly developed by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications. © 2010 Springer Science+Business Media B.V.

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December 1, 2010

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Gildenblat, G., Wu, W., Li, X., Van Langevelde, R., Scholten, A. J., Smit, G. D. J., & Klaassen, D. B. M. (2010). Surface-potential-based compact model of bulk MOSFET. In Compact Modeling: Principles, Techniques and Applications (pp. 3–40). https://doi.org/10.1007/978-90-481-8614-3_1
Gildenblat, G., W. Wu, X. Li, R. Van Langevelde, A. J. Scholten, G. D. J. Smit, and D. B. M. Klaassen. “Surface-potential-based compact model of bulk MOSFET.” In Compact Modeling: Principles, Techniques and Applications, 3–40, 2010. https://doi.org/10.1007/978-90-481-8614-3_1.
Gildenblat G, Wu W, Li X, Van Langevelde R, Scholten AJ, Smit GDJ, et al. Surface-potential-based compact model of bulk MOSFET. In: Compact Modeling: Principles, Techniques and Applications. 2010. p. 3–40.
Gildenblat, G., et al. “Surface-potential-based compact model of bulk MOSFET.” Compact Modeling: Principles, Techniques and Applications, 2010, pp. 3–40. Scopus, doi:10.1007/978-90-481-8614-3_1.
Gildenblat G, Wu W, Li X, Van Langevelde R, Scholten AJ, Smit GDJ, Klaassen DBM. Surface-potential-based compact model of bulk MOSFET. Compact Modeling: Principles, Techniques and Applications. 2010. p. 3–40.

DOI

Publication Date

December 1, 2010

Start / End Page

3 / 40