Skip to main content

SP-SOI: A third generation surface potential based compact SOI MOSFET model

Publication ,  Conference
Wu, W; Li, X; Wang, H; Gildenblat, G; Workman, G; Veeraraghavan, S; McAndrew, C
Published in: Proceedings of the Custom Integrated Circuits Conference
January 1, 2005

We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40nm polysilicon length) and is implemented in a circuit simulator. © 2005 IEEE.

Duke Scholars

Published In

Proceedings of the Custom Integrated Circuits Conference

DOI

ISSN

0886-5930

Publication Date

January 1, 2005

Volume

2005

Start / End Page

819 / 822
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Wu, W., Li, X., Wang, H., Gildenblat, G., Workman, G., Veeraraghavan, S., & McAndrew, C. (2005). SP-SOI: A third generation surface potential based compact SOI MOSFET model. In Proceedings of the Custom Integrated Circuits Conference (Vol. 2005, pp. 819–822). https://doi.org/10.1109/CICC.2005.1568795
Wu, W., X. Li, H. Wang, G. Gildenblat, G. Workman, S. Veeraraghavan, and C. McAndrew. “SP-SOI: A third generation surface potential based compact SOI MOSFET model.” In Proceedings of the Custom Integrated Circuits Conference, 2005:819–22, 2005. https://doi.org/10.1109/CICC.2005.1568795.
Wu W, Li X, Wang H, Gildenblat G, Workman G, Veeraraghavan S, et al. SP-SOI: A third generation surface potential based compact SOI MOSFET model. In: Proceedings of the Custom Integrated Circuits Conference. 2005. p. 819–22.
Wu, W., et al. “SP-SOI: A third generation surface potential based compact SOI MOSFET model.” Proceedings of the Custom Integrated Circuits Conference, vol. 2005, 2005, pp. 819–22. Scopus, doi:10.1109/CICC.2005.1568795.
Wu W, Li X, Wang H, Gildenblat G, Workman G, Veeraraghavan S, McAndrew C. SP-SOI: A third generation surface potential based compact SOI MOSFET model. Proceedings of the Custom Integrated Circuits Conference. 2005. p. 819–822.

Published In

Proceedings of the Custom Integrated Circuits Conference

DOI

ISSN

0886-5930

Publication Date

January 1, 2005

Volume

2005

Start / End Page

819 / 822