Scholars@Duke

Improved parameter extraction procedure for PSP-based MOS varactor model

Publication ,  Conference
Zhu, Z; Victory, J; Chaudhry, S; Dong, L; Yant, Z; Zheng, J; Wu, W; Li, X; Zhou, Q; Kolev, P; McAndrew, CC; Gildenbla, G
Published in: IEEE International Conference on Microelectronic Test Structures
July 15, 2009
Published version (DOI)

We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSYAR, the industry standard MOS varactor model. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSYAR P-gatefPwell tunneling current sub-model.

Duke Scholars

Xin Li
Author Xin Li Electrical and Computer Engineering

Published In

IEEE International Conference on Microelectronic Test Structures

DOI

10.1109/ICMTS.2009.4814629

Publication Date

July 15, 2009

Start / End Page

148 / 153
 

Citation

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Zhu, Z., Victory, J., Chaudhry, S., Dong, L., Yant, Z., Zheng, J., … Gildenbla, G. (2009). Improved parameter extraction procedure for PSP-based MOS varactor model. In IEEE International Conference on Microelectronic Test Structures (pp. 148–153). https://doi.org/10.1109/ICMTS.2009.4814629
Zhu, Z., J. Victory, S. Chaudhry, L. Dong, Z. Yant, J. Zheng, W. Wu, et al. “Improved parameter extraction procedure for PSP-based MOS varactor model.” In IEEE International Conference on Microelectronic Test Structures, 148–53, 2009. https://doi.org/10.1109/ICMTS.2009.4814629.
Zhu Z, Victory J, Chaudhry S, Dong L, Yant Z, Zheng J, et al. Improved parameter extraction procedure for PSP-based MOS varactor model. In: IEEE International Conference on Microelectronic Test Structures. 2009. p. 148–53.
Zhu, Z., et al. “Improved parameter extraction procedure for PSP-based MOS varactor model.” IEEE International Conference on Microelectronic Test Structures, 2009, pp. 148–53. Scopus, doi:10.1109/ICMTS.2009.4814629.
Zhu Z, Victory J, Chaudhry S, Dong L, Yant Z, Zheng J, Wu W, Li X, Zhou Q, Kolev P, McAndrew CC, Gildenbla G. Improved parameter extraction procedure for PSP-based MOS varactor model. IEEE International Conference on Microelectronic Test Structures. 2009. p. 148–153.

Published In

IEEE International Conference on Microelectronic Test Structures

DOI

10.1109/ICMTS.2009.4814629

Publication Date

July 15, 2009

Start / End Page

148 / 153