Scholars@Duke

The new CMC standard compact MOS model PSP: Advantages for RF applications

Publication ,  Conference
Scholten, AJ; Smit, GDJ; De Vries, BA; Tiemeijer, LF; Croon, JA; Klaassen, DBM; Van Langevelde, R; Li, X; Wu, W; Gildenblat, G
Published in: IEEE Journal of Solid-State Circuits
May 1, 2009
Published version (DOI)

The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the model are discussed, such as Gummel symmetry, capacitance reciprocity at $VDS = 0 V, parasitic resistances, junction modeling, distortion modeling, and noise modeling. Examples from circuit design are used to illustrate the benefits of the PSP model. © 2006 IEEE.

Duke Scholars

Xin Li
Author Xin Li Electrical and Computer Engineering

Published In

IEEE Journal of Solid-State Circuits

DOI

10.1109/JSSC.2009.2015821

ISSN

0018-9200

Publication Date

May 1, 2009

Volume

44

Issue

5

Start / End Page

1415 / 1424

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0204 Condensed Matter Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Scholten, A. J., Smit, G. D. J., De Vries, B. A., Tiemeijer, L. F., Croon, J. A., Klaassen, D. B. M., … Gildenblat, G. (2009). The new CMC standard compact MOS model PSP: Advantages for RF applications. In IEEE Journal of Solid-State Circuits (Vol. 44, pp. 1415–1424). https://doi.org/10.1109/JSSC.2009.2015821
Scholten, A. J., G. D. J. Smit, B. A. De Vries, L. F. Tiemeijer, J. A. Croon, D. B. M. Klaassen, R. Van Langevelde, X. Li, W. Wu, and G. Gildenblat. “The new CMC standard compact MOS model PSP: Advantages for RF applications.” In IEEE Journal of Solid-State Circuits, 44:1415–24, 2009. https://doi.org/10.1109/JSSC.2009.2015821.
Scholten AJ, Smit GDJ, De Vries BA, Tiemeijer LF, Croon JA, Klaassen DBM, et al. The new CMC standard compact MOS model PSP: Advantages for RF applications. In: IEEE Journal of Solid-State Circuits. 2009. p. 1415–24.
Scholten, A. J., et al. “The new CMC standard compact MOS model PSP: Advantages for RF applications.” IEEE Journal of Solid-State Circuits, vol. 44, no. 5, 2009, pp. 1415–24. Scopus, doi:10.1109/JSSC.2009.2015821.
Scholten AJ, Smit GDJ, De Vries BA, Tiemeijer LF, Croon JA, Klaassen DBM, Van Langevelde R, Li X, Wu W, Gildenblat G. The new CMC standard compact MOS model PSP: Advantages for RF applications. IEEE Journal of Solid-State Circuits. 2009. p. 1415–1424.

Published In

IEEE Journal of Solid-State Circuits

DOI

10.1109/JSSC.2009.2015821

ISSN

0018-9200

Publication Date

May 1, 2009

Volume

44

Issue

5

Start / End Page

1415 / 1424

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0204 Condensed Matter Physics