A unified nonquasi-static MOSFET model for large-signal and small-signal simulations
Publication
, Journal Article
Wang, H; Li, X; Wu, W; Gildenblat, G; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM
Published in: IEEE Transactions on Electron Devices
September 1, 2006
The spline collocation-based nonquasi-static (NQS) model is further developed to include all regions of operation and small-geometry effects. The new formulation provides a unified (hence consistent) approach to both large-signal and small-signal NQS modeling and is sufficiently flexible to work with any surface-potential-based MOSFET model. The model is verified through comparison with the channel segmentation method, two-dimensional numerical simulations, and experimental results and demonstrates a controlled tradeoff between model accuracy and efficiency. The new NQS model has been implemented into PSP model. Circuit simulations are given to demonstrate the accuracy and applicability of the new model. © 2006 IEEE.
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
September 1, 2006
Volume
53
Issue
9
Start / End Page
2035 / 2042
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Wang, H., Li, X., Wu, W., Gildenblat, G., Van Langevelde, R., Smit, G. D. J., … Klaassen, D. B. M. (2006). A unified nonquasi-static MOSFET model for large-signal and small-signal simulations. IEEE Transactions on Electron Devices, 53(9), 2035–2042. https://doi.org/10.1109/TED.2005.881003
Wang, H., X. Li, W. Wu, G. Gildenblat, R. Van Langevelde, G. D. J. Smit, A. J. Scholten, and D. B. M. Klaassen. “A unified nonquasi-static MOSFET model for large-signal and small-signal simulations.” IEEE Transactions on Electron Devices 53, no. 9 (September 1, 2006): 2035–42. https://doi.org/10.1109/TED.2005.881003.
Wang H, Li X, Wu W, Gildenblat G, Van Langevelde R, Smit GDJ, et al. A unified nonquasi-static MOSFET model for large-signal and small-signal simulations. IEEE Transactions on Electron Devices. 2006 Sep 1;53(9):2035–42.
Wang, H., et al. “A unified nonquasi-static MOSFET model for large-signal and small-signal simulations.” IEEE Transactions on Electron Devices, vol. 53, no. 9, Sept. 2006, pp. 2035–42. Scopus, doi:10.1109/TED.2005.881003.
Wang H, Li X, Wu W, Gildenblat G, Van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM. A unified nonquasi-static MOSFET model for large-signal and small-signal simulations. IEEE Transactions on Electron Devices. 2006 Sep 1;53(9):2035–2042.
Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
September 1, 2006
Volume
53
Issue
9
Start / End Page
2035 / 2042
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering