PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
Publication
, Journal Article
Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; McAndrew, CC; van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J
Published in: Solid-State Electronics
January 1, 2009
This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body currents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes. © 2008 Elsevier Ltd. All rights reserved.
Duke Scholars
Published In
Solid-State Electronics
DOI
ISSN
0038-1101
Publication Date
January 1, 2009
Volume
53
Issue
1
Start / End Page
18 / 29
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Wu, W., Li, X., Gildenblat, G., Workman, G. O., Veeraraghavan, S., McAndrew, C. C., … Watts, J. (2009). PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations. Solid-State Electronics, 53(1), 18–29. https://doi.org/10.1016/j.sse.2008.09.009
Wu, W., X. Li, G. Gildenblat, G. O. Workman, S. Veeraraghavan, C. C. McAndrew, R. van Langevelde, et al. “PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations.” Solid-State Electronics 53, no. 1 (January 1, 2009): 18–29. https://doi.org/10.1016/j.sse.2008.09.009.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, McAndrew CC, et al. PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations. Solid-State Electronics. 2009 Jan 1;53(1):18–29.
Wu, W., et al. “PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations.” Solid-State Electronics, vol. 53, no. 1, Jan. 2009, pp. 18–29. Scopus, doi:10.1016/j.sse.2008.09.009.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, McAndrew CC, van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM, Watts J. PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations. Solid-State Electronics. 2009 Jan 1;53(1):18–29.
Published In
Solid-State Electronics
DOI
ISSN
0038-1101
Publication Date
January 1, 2009
Volume
53
Issue
1
Start / End Page
18 / 29
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics