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A nonlinear body resistance model for accurate PD/SOI technology characterization

Publication ,  Conference
Wu, W; Li, X; Gildenblat, G; Workman, GO; Veeraraghavan, S; Watts, J
Published in: Proceedings - IEEE International SOI Conference
December 24, 2008

We report a bias-dependent, nonlinear body resistance model suitable for accurate characterization of PD/SOI technology. This model is implemented in the surface potential based SOI MOSFET compact model PSP-SOI and experimentally verified for 65 nm PD/SOI technology node. ©2008 IEEE.

Duke Scholars

Published In

Proceedings - IEEE International SOI Conference

DOI

ISSN

1078-621X

Publication Date

December 24, 2008

Start / End Page

151 / 152
 

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Wu, W., Li, X., Gildenblat, G., Workman, G. O., Veeraraghavan, S., & Watts, J. (2008). A nonlinear body resistance model for accurate PD/SOI technology characterization. In Proceedings - IEEE International SOI Conference (pp. 151–152). https://doi.org/10.1109/SOI.2008.4656339
Wu, W., X. Li, G. Gildenblat, G. O. Workman, S. Veeraraghavan, and J. Watts. “A nonlinear body resistance model for accurate PD/SOI technology characterization.” In Proceedings - IEEE International SOI Conference, 151–52, 2008. https://doi.org/10.1109/SOI.2008.4656339.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, Watts J. A nonlinear body resistance model for accurate PD/SOI technology characterization. In: Proceedings - IEEE International SOI Conference. 2008. p. 151–2.
Wu, W., et al. “A nonlinear body resistance model for accurate PD/SOI technology characterization.” Proceedings - IEEE International SOI Conference, 2008, pp. 151–52. Scopus, doi:10.1109/SOI.2008.4656339.
Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, Watts J. A nonlinear body resistance model for accurate PD/SOI technology characterization. Proceedings - IEEE International SOI Conference. 2008. p. 151–152.

Published In

Proceedings - IEEE International SOI Conference

DOI

ISSN

1078-621X

Publication Date

December 24, 2008

Start / End Page

151 / 152