Reply to comments of F. F. Morehead

The expression used for electric field in the article being discussed is not appropriate for the experimental conditions, but there is a built-in electric field present that affects Sb diffusion. Thus the calculated values of D are reasonably within the experimental error of the data on which the calculations are based. Our conclusions that V vacancies do not play an important role in Sb diffusion and that Sb-B pairs are responsible for retarded Sb diffusion in high-concentration B-doned Si are supported. © 1987, Materials Research Society. All rights reserved.

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Author Richard B. Fair Electrical and Computer Engineering