Skip to main content
Journal cover image

CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

Publication ,  Journal Article
Li, X; Fu, J; Huang, Y; Hong, Z
Published in: Journal of Semiconductors
August 1, 2011

A highly linear, high output power, 0.13 μm CMOS direct conversion transmitter for wideband code division multiple access (WCDMA) is described. The transmitter delivers 6.8 dBm output power with 38 mA current consumption. With careful design on the resistor bank in the IQ-modulator, the gain step accuracy is within 0.1 dB, hence the image rejection ratio can be kept below -47 dBc for the entire output range. The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc, respectively, and the corresponding EVM is 3.6%. The overall gain can be programmed in 6 dB steps in a 66-dB range. © 2011 Chinese Institute of Electronics.

Duke Scholars

Published In

Journal of Semiconductors

DOI

ISSN

1674-4926

Publication Date

August 1, 2011

Volume

32

Issue

8
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Li, X., Fu, J., Huang, Y., & Hong, Z. (2011). CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy. Journal of Semiconductors, 32(8). https://doi.org/10.1088/1674-4926/32/8/085010
Li, X., J. Fu, Y. Huang, and Z. Hong. “CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy.” Journal of Semiconductors 32, no. 8 (August 1, 2011). https://doi.org/10.1088/1674-4926/32/8/085010.
Li X, Fu J, Huang Y, Hong Z. CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy. Journal of Semiconductors. 2011 Aug 1;32(8).
Li, X., et al. “CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy.” Journal of Semiconductors, vol. 32, no. 8, Aug. 2011. Scopus, doi:10.1088/1674-4926/32/8/085010.
Li X, Fu J, Huang Y, Hong Z. CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy. Journal of Semiconductors. 2011 Aug 1;32(8).
Journal cover image

Published In

Journal of Semiconductors

DOI

ISSN

1674-4926

Publication Date

August 1, 2011

Volume

32

Issue

8