Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
Publication
, Journal Article
Zheng, CC; Xu, SJ; Ning, JQ; Bao, W; Wang, JF; Gao, J; Liu, JM; Zhu, JH; Liu, XL
Published in: Semiconductor Science and Technology
March 1, 2012
ZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd.
Duke Scholars
Published In
Semiconductor Science and Technology
DOI
EISSN
1361-6641
ISSN
0268-1242
Publication Date
March 1, 2012
Volume
27
Issue
3
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Zheng, C. C., Xu, S. J., Ning, J. Q., Bao, W., Wang, J. F., Gao, J., … Liu, X. L. (2012). Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes. Semiconductor Science and Technology, 27(3). https://doi.org/10.1088/0268-1242/27/3/035008
Zheng, C. C., S. J. Xu, J. Q. Ning, W. Bao, J. F. Wang, J. Gao, J. M. Liu, J. H. Zhu, and X. L. Liu. “Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes.” Semiconductor Science and Technology 27, no. 3 (March 1, 2012). https://doi.org/10.1088/0268-1242/27/3/035008.
Zheng CC, Xu SJ, Ning JQ, Bao W, Wang JF, Gao J, et al. Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes. Semiconductor Science and Technology. 2012 Mar 1;27(3).
Zheng, C. C., et al. “Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes.” Semiconductor Science and Technology, vol. 27, no. 3, Mar. 2012. Scopus, doi:10.1088/0268-1242/27/3/035008.
Zheng CC, Xu SJ, Ning JQ, Bao W, Wang JF, Gao J, Liu JM, Zhu JH, Liu XL. Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes. Semiconductor Science and Technology. 2012 Mar 1;27(3).
Published In
Semiconductor Science and Technology
DOI
EISSN
1361-6641
ISSN
0268-1242
Publication Date
March 1, 2012
Volume
27
Issue
3
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics