Optical properties of light-hole excitons in GaN epilayers
Publication
, Journal Article
Zhang, F; Xu, SJ; Ning, JQ; Zheng, CC; Zhao, DG; Yang, H; Che, CM
Published in: Journal of Applied Physics
December 1, 2010
Optical properties of light-hole free exciton (FXB) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FXA) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FXB broadens faster than the FXA with increasing temperature. Moreover, the luminescence lifetime of FXB is found to be shorter than that of FXA. © 2010 American Institute of Physics.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 2010
Volume
108
Issue
11
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Zhang, F., Xu, S. J., Ning, J. Q., Zheng, C. C., Zhao, D. G., Yang, H., & Che, C. M. (2010). Optical properties of light-hole excitons in GaN epilayers. Journal of Applied Physics, 108(11). https://doi.org/10.1063/1.3520218
Zhang, F., S. J. Xu, J. Q. Ning, C. C. Zheng, D. G. Zhao, H. Yang, and C. M. Che. “Optical properties of light-hole excitons in GaN epilayers.” Journal of Applied Physics 108, no. 11 (December 1, 2010). https://doi.org/10.1063/1.3520218.
Zhang F, Xu SJ, Ning JQ, Zheng CC, Zhao DG, Yang H, et al. Optical properties of light-hole excitons in GaN epilayers. Journal of Applied Physics. 2010 Dec 1;108(11).
Zhang, F., et al. “Optical properties of light-hole excitons in GaN epilayers.” Journal of Applied Physics, vol. 108, no. 11, Dec. 2010. Scopus, doi:10.1063/1.3520218.
Zhang F, Xu SJ, Ning JQ, Zheng CC, Zhao DG, Yang H, Che CM. Optical properties of light-hole excitons in GaN epilayers. Journal of Applied Physics. 2010 Dec 1;108(11).
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 2010
Volume
108
Issue
11
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences