Skip to main content
construction release_alert
Scholars@Duke will be undergoing maintenance April 11-15. Some features may be unavailable during this time.
cancel
Journal cover image

Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells

Publication ,  Journal Article
Deng, Z; Wang, RX; Ning, JQ; Zheng, CC; Bao, W; Xu, SJ; Zhang, XD; Lu, SL; Dong, JR; Zhang, BS; Yang, H
Published in: Solar Energy Materials and Solar Cells
January 31, 2013

Radiative recombination of carriers in two kinds of GaxIn 1-xP/GaAs double-junction tandem solar cell structures was investigated by using room-temperature electroluminescence (EL) and photoluminescence (PL) techniques. Efficient radiative recombination was observed simultaneously in the top and the bottom subcells in both the samples. By studying the behavior of EL and PL spectra, the radiative recombination intensity ΦEL was demonstrated to be reliant on the material-dependent radiative recombination coefficient, base layer doping concentration and thickness. Furthermore, dependence of ΦEL on substrate misorientation in both the subcells was also evidenced, which was explained in terms of the growth-induced variations in microstructure for the GaInP top cell and in potential barrier profile across the p-n junction for the GaAs bottom cell. Based on these observations, the radiative recombination in the two base layers of the subcells was demonstrated to be the major carrier loss mechanism in the GaxIn1-xP/GaAs double-junction tandem photovoltaic devices and should be suppressed. © 2012 Elsevier B.V.

Duke Scholars

Published In

Solar Energy Materials and Solar Cells

DOI

ISSN

0927-0248

Publication Date

January 31, 2013

Volume

111

Start / End Page

102 / 106

Related Subject Headings

  • Energy
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Deng, Z., Wang, R. X., Ning, J. Q., Zheng, C. C., Bao, W., Xu, S. J., … Yang, H. (2013). Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells. Solar Energy Materials and Solar Cells, 111, 102–106. https://doi.org/10.1016/j.solmat.2012.12.025
Deng, Z., R. X. Wang, J. Q. Ning, C. C. Zheng, W. Bao, S. J. Xu, X. D. Zhang, et al. “Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells.” Solar Energy Materials and Solar Cells 111 (January 31, 2013): 102–6. https://doi.org/10.1016/j.solmat.2012.12.025.
Deng Z, Wang RX, Ning JQ, Zheng CC, Bao W, Xu SJ, et al. Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells. Solar Energy Materials and Solar Cells. 2013 Jan 31;111:102–6.
Deng, Z., et al. “Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells.” Solar Energy Materials and Solar Cells, vol. 111, Jan. 2013, pp. 102–06. Scopus, doi:10.1016/j.solmat.2012.12.025.
Deng Z, Wang RX, Ning JQ, Zheng CC, Bao W, Xu SJ, Zhang XD, Lu SL, Dong JR, Zhang BS, Yang H. Radiative recombination of carriers in the GaxIn 1-xP/GaAs double-junction tandem solar cells. Solar Energy Materials and Solar Cells. 2013 Jan 31;111:102–106.
Journal cover image

Published In

Solar Energy Materials and Solar Cells

DOI

ISSN

0927-0248

Publication Date

January 31, 2013

Volume

111

Start / End Page

102 / 106

Related Subject Headings

  • Energy
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences