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Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

Publication ,  Journal Article
Ko, TJ; Li, H; Mofid, SA; Yoo, C; Okogbue, E; Han, SS; Shawkat, MS; Krishnaprasad, A; Islam, MM; Dev, D; Shin, Y; Oh, KH; Lee, GH; Roy, T; Jung, Y
Published in: iScience
November 20, 2020

Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

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Published In

iScience

DOI

EISSN

2589-0042

Publication Date

November 20, 2020

Volume

23

Issue

11
 

Citation

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MLA
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Ko, T. J., Li, H., Mofid, S. A., Yoo, C., Okogbue, E., Han, S. S., … Jung, Y. (2020). Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications. IScience, 23(11). https://doi.org/10.1016/j.isci.2020.101676
Ko, T. J., H. Li, S. A. Mofid, C. Yoo, E. Okogbue, S. S. Han, M. S. Shawkat, et al. “Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications.” IScience 23, no. 11 (November 20, 2020). https://doi.org/10.1016/j.isci.2020.101676.
Ko TJ, Li H, Mofid SA, Yoo C, Okogbue E, Han SS, et al. Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications. iScience. 2020 Nov 20;23(11).
Ko, T. J., et al. “Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications.” IScience, vol. 23, no. 11, Nov. 2020. Scopus, doi:10.1016/j.isci.2020.101676.
Ko TJ, Li H, Mofid SA, Yoo C, Okogbue E, Han SS, Shawkat MS, Krishnaprasad A, Islam MM, Dev D, Shin Y, Oh KH, Lee GH, Roy T, Jung Y. Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications. iScience. 2020 Nov 20;23(11).
Journal cover image

Published In

iScience

DOI

EISSN

2589-0042

Publication Date

November 20, 2020

Volume

23

Issue

11