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Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor

Publication ,  Journal Article
Dev, D; Shawkat, MS; Krishnaprasad, A; Jung, Y; Roy, T
Published in: IEEE Electron Device Letters
September 1, 2020
Published version (DOI)

An artificial nociceptor realized with a single 2D MoS2-based memristor device is demonstrated in this work. The threshold switching memristor (TSM) device exhibits volatile resistance switching characteristics with low threshold voltage and a high ON-OFF ratio of 106. The Au/MoS2/Ag TSM device imitates a nociceptor, a special receptor of a sensory neuron that can detect noxious stimulus and transfer the signal to the central nervous system for preventive actions. The single device exhibits all key features of nociceptors including threshold, relaxation, 'no adaptation' and sensitization phenomena of allodynia and hyperalgesia depending on the strength, duration, and repetition of the external stimuli. This work indicates applicability of this device in artificial sensory alarm systems for humanoid robots.

Duke Scholars

Tania Roy
Author Tania Roy Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/LED.2020.3012831

EISSN

1558-0563

ISSN

0741-3106

Publication Date

September 1, 2020

Volume

41

Issue

9

Start / End Page

1440 / 1443

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Dev, D., Shawkat, M. S., Krishnaprasad, A., Jung, Y., & Roy, T. (2020). Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor. IEEE Electron Device Letters, 41(9), 1440–1443. https://doi.org/10.1109/LED.2020.3012831
Dev, D., M. S. Shawkat, A. Krishnaprasad, Y. Jung, and T. Roy. “Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor.” IEEE Electron Device Letters 41, no. 9 (September 1, 2020): 1440–43. https://doi.org/10.1109/LED.2020.3012831.
Dev D, Shawkat MS, Krishnaprasad A, Jung Y, Roy T. Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor. IEEE Electron Device Letters. 2020 Sep 1;41(9):1440–3.
Dev, D., et al. “Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor.” IEEE Electron Device Letters, vol. 41, no. 9, Sept. 2020, pp. 1440–43. Scopus, doi:10.1109/LED.2020.3012831.
Dev D, Shawkat MS, Krishnaprasad A, Jung Y, Roy T. Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor. IEEE Electron Device Letters. 2020 Sep 1;41(9):1440–1443.

Published In

IEEE Electron Device Letters

DOI

10.1109/LED.2020.3012831

EISSN

1558-0563

ISSN

0741-3106

Publication Date

September 1, 2020

Volume

41

Issue

9

Start / End Page

1440 / 1443

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering