2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron
Publication
, Journal Article
Dev, D; Krishnaprasad, A; Shawkat, MS; He, Z; Das, S; Fan, D; Chung, HS; Jung, Y; Roy, T
Published in: IEEE Electron Device Letters
June 1, 2020
In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 106, originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.
Duke Scholars
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
June 1, 2020
Volume
41
Issue
6
Start / End Page
936 / 939
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Dev, D., Krishnaprasad, A., Shawkat, M. S., He, Z., Das, S., Fan, D., … Roy, T. (2020). 2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron. IEEE Electron Device Letters, 41(6), 936–939. https://doi.org/10.1109/LED.2020.2988247
Dev, D., A. Krishnaprasad, M. S. Shawkat, Z. He, S. Das, D. Fan, H. S. Chung, Y. Jung, and T. Roy. “2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron.” IEEE Electron Device Letters 41, no. 6 (June 1, 2020): 936–39. https://doi.org/10.1109/LED.2020.2988247.
Dev D, Krishnaprasad A, Shawkat MS, He Z, Das S, Fan D, et al. 2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron. IEEE Electron Device Letters. 2020 Jun 1;41(6):936–9.
Dev, D., et al. “2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron.” IEEE Electron Device Letters, vol. 41, no. 6, June 2020, pp. 936–39. Scopus, doi:10.1109/LED.2020.2988247.
Dev D, Krishnaprasad A, Shawkat MS, He Z, Das S, Fan D, Chung HS, Jung Y, Roy T. 2D MoS2 -Based Threshold Switching Memristor for Artificial Neuron. IEEE Electron Device Letters. 2020 Jun 1;41(6):936–939.
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
June 1, 2020
Volume
41
Issue
6
Start / End Page
936 / 939
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering