Artificial Neuron using MoS2 /graphene threshold switching memristors
With the ever-increasing demand for low power electronics, neuromorphic computing has garnered huge interest in recent times. Artificial neurons form a critical part in neuromorphic circuits, and have been realized with complex CMOS circuitry in the past. Recently, metal-insulator-transition materials have been used to realize artificial neurons [1]-[3]. Although memristors have been used to realize synaptic behavior, not much work has been done in demonstrating neuronal response with these devices. A threshold switching memristor with Ag/SiO2/ Au was used recently to demonstrate the integration-and-fire behavior of a neuron [4] while a neuristor was realized using Mott memristors [5]. In this work, we use the volatility of threshold switching MoS2/Graphene (Gr) 2D/2D heterojunction system to realize the integration-and-fire response of a neuron. We use large area chemical vapor deposited (CVD) graphene and Mos2, enabling large scale realization of these devices. These low power devices can emulate the most vital properties of a neuron, such as a threshold driven spiking and a refractory period. These results show that the developed artificial neuron can playa crucial role in neuromorphic computing.
