2D layered materials: From materials properties to device applications
Publication
, Conference
Zhao, P; Desai, S; Tosun, M; Roy, T; Fang, H; Sachid, A; Amani, M; Hu, C; Javey, A
Published in: Technical Digest - International Electron Devices Meeting, IEDM
February 16, 2015
An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very interesting for optoelectronic applications. Scaling effects, doping techniques, contacts and strain engineering of 2D materials are discussed. In addition, important advancements in 2D material electronic devices, for example the all-2D field effect transistor (FET), heterojunction devices, and tunnel diode are highlighted.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
February 16, 2015
Volume
2016-February
Start / End Page
27.3.1 / 27.3.4
Citation
APA
Chicago
ICMJE
MLA
NLM
Zhao, P., Desai, S., Tosun, M., Roy, T., Fang, H., Sachid, A., … Javey, A. (2015). 2D layered materials: From materials properties to device applications. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2016-February, pp. 27.3.1-27.3.4). https://doi.org/10.1109/IEDM.2015.7409780
Zhao, P., S. Desai, M. Tosun, T. Roy, H. Fang, A. Sachid, M. Amani, C. Hu, and A. Javey. “2D layered materials: From materials properties to device applications.” In Technical Digest - International Electron Devices Meeting, IEDM, 2016-February:27.3.1-27.3.4, 2015. https://doi.org/10.1109/IEDM.2015.7409780.
Zhao P, Desai S, Tosun M, Roy T, Fang H, Sachid A, et al. 2D layered materials: From materials properties to device applications. In: Technical Digest - International Electron Devices Meeting, IEDM. 2015. p. 27.3.1-27.3.4.
Zhao, P., et al. “2D layered materials: From materials properties to device applications.” Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, 2015, pp. 27.3.1-27.3.4. Scopus, doi:10.1109/IEDM.2015.7409780.
Zhao P, Desai S, Tosun M, Roy T, Fang H, Sachid A, Amani M, Hu C, Javey A. 2D layered materials: From materials properties to device applications. Technical Digest - International Electron Devices Meeting, IEDM. 2015. p. 27.3.1-27.3.4.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
February 16, 2015
Volume
2016-February
Start / End Page
27.3.1 / 27.3.4