Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs
Publication
, Journal Article
Puzyrev, Y; Mukherjee, S; Chen, J; Roy, T; Silvestri, M; Schrimpf, RD; Fleetwood, DM; Singh, J; Hinckley, JM; Paccagnella, A; Pantelides, ST
Published in: IEEE Transactions on Electron Devices
January 1, 2014
Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the average electron energy has a spatial peak with 〈EAVE〉∼1.5 eV. The peak is located at the edge of the gate. At this location, the carrier versus energy distribution has a large tail extending over 3 eV. When transferred to the lattice, this energy can cause defect dehydrogenation and device degradation. These results are consistent with the experimental data indicating maximum degradation in the semi-ON bias condition. © 1963-2012 IEEE.
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
January 1, 2014
Volume
61
Issue
5
Start / End Page
1316 / 1320
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
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APA
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MLA
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Puzyrev, Y., Mukherjee, S., Chen, J., Roy, T., Silvestri, M., Schrimpf, R. D., … Pantelides, S. T. (2014). Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs. IEEE Transactions on Electron Devices, 61(5), 1316–1320. https://doi.org/10.1109/TED.2014.2309278
Puzyrev, Y., S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R. D. Schrimpf, D. M. Fleetwood, et al. “Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs.” IEEE Transactions on Electron Devices 61, no. 5 (January 1, 2014): 1316–20. https://doi.org/10.1109/TED.2014.2309278.
Puzyrev Y, Mukherjee S, Chen J, Roy T, Silvestri M, Schrimpf RD, et al. Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs. IEEE Transactions on Electron Devices. 2014 Jan 1;61(5):1316–20.
Puzyrev, Y., et al. “Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 61, no. 5, Jan. 2014, pp. 1316–20. Scopus, doi:10.1109/TED.2014.2309278.
Puzyrev Y, Mukherjee S, Chen J, Roy T, Silvestri M, Schrimpf RD, Fleetwood DM, Singh J, Hinckley JM, Paccagnella A, Pantelides ST. Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs. IEEE Transactions on Electron Devices. 2014 Jan 1;61(5):1316–1320.
Published In
IEEE Transactions on Electron Devices
DOI
ISSN
0018-9383
Publication Date
January 1, 2014
Volume
61
Issue
5
Start / End Page
1316 / 1320
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering