Integration and characterization of graphene-insulator-graphene junctions
Publication
, Conference
Roy, T; Joiner, C; Razavi, Z; Vogel, EM
Published in: Ecs Transactions
October 21, 2013
Graphene-insulator-graphene tunnel junctions have been fabricated and characterized. The cleaning processes for chemical vapor deposited graphene and integration of barrier engineered atomic layer deposited tunnel dielectrics is presented. Initial results of device characterization demonstrate subthreshold slopes less than 100 mV/dec. © The Electrochemical Society.
Duke Scholars
Published In
Ecs Transactions
DOI
EISSN
1938-6737
ISSN
1938-5862
ISBN
9781607683742
Publication Date
October 21, 2013
Volume
53
Issue
1
Start / End Page
63 / 69
Citation
APA
Chicago
ICMJE
MLA
NLM
Roy, T., Joiner, C., Razavi, Z., & Vogel, E. M. (2013). Integration and characterization of graphene-insulator-graphene junctions. In Ecs Transactions (Vol. 53, pp. 63–69). https://doi.org/10.1149/05301.0063ecst
Roy, T., C. Joiner, Z. Razavi, and E. M. Vogel. “Integration and characterization of graphene-insulator-graphene junctions.” In Ecs Transactions, 53:63–69, 2013. https://doi.org/10.1149/05301.0063ecst.
Roy T, Joiner C, Razavi Z, Vogel EM. Integration and characterization of graphene-insulator-graphene junctions. In: Ecs Transactions. 2013. p. 63–9.
Roy, T., et al. “Integration and characterization of graphene-insulator-graphene junctions.” Ecs Transactions, vol. 53, no. 1, 2013, pp. 63–69. Scopus, doi:10.1149/05301.0063ecst.
Roy T, Joiner C, Razavi Z, Vogel EM. Integration and characterization of graphene-insulator-graphene junctions. Ecs Transactions. 2013. p. 63–69.
Published In
Ecs Transactions
DOI
EISSN
1938-6737
ISSN
1938-5862
ISBN
9781607683742
Publication Date
October 21, 2013
Volume
53
Issue
1
Start / End Page
63 / 69