Barrier engineering for double layer CVD graphene tunnel FETs
Publication
, Journal Article
Roy, T; Hesabi, ZR; Joiner, CA; Fujimoto, A; Vogel, EM
Published in: Microelectronic Engineering
May 1, 2013
Atomic layer deposited high-k dielectrics with sputtered TiOx as the seeding layer have been explored for double layer graphene tunnel transistors. The subthreshold swing of these transistors is <100 mV/decade. Temperature-dependent measurements indicate defect-mediated tunneling through these dielectrics. However, the current symmetry can still be altered by engineering the tunnel barriers. © 2013 Elsevier Ltd. All rights reserved.
Duke Scholars
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
May 1, 2013
Volume
109
Start / End Page
117 / 119
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Roy, T., Hesabi, Z. R., Joiner, C. A., Fujimoto, A., & Vogel, E. M. (2013). Barrier engineering for double layer CVD graphene tunnel FETs. Microelectronic Engineering, 109, 117–119. https://doi.org/10.1016/j.mee.2013.02.090
Roy, T., Z. R. Hesabi, C. A. Joiner, A. Fujimoto, and E. M. Vogel. “Barrier engineering for double layer CVD graphene tunnel FETs.” Microelectronic Engineering 109 (May 1, 2013): 117–19. https://doi.org/10.1016/j.mee.2013.02.090.
Roy T, Hesabi ZR, Joiner CA, Fujimoto A, Vogel EM. Barrier engineering for double layer CVD graphene tunnel FETs. Microelectronic Engineering. 2013 May 1;109:117–9.
Roy, T., et al. “Barrier engineering for double layer CVD graphene tunnel FETs.” Microelectronic Engineering, vol. 109, May 2013, pp. 117–19. Scopus, doi:10.1016/j.mee.2013.02.090.
Roy T, Hesabi ZR, Joiner CA, Fujimoto A, Vogel EM. Barrier engineering for double layer CVD graphene tunnel FETs. Microelectronic Engineering. 2013 May 1;109:117–119.
Published In
Microelectronic Engineering
DOI
ISSN
0167-9317
Publication Date
May 1, 2013
Volume
109
Start / End Page
117 / 119
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
- 0299 Other Physical Sciences
- 0204 Condensed Matter Physics