Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
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Puzyrev, YS; Roy, T; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Pantelides, ST
Published in: IEEE Transactions on Nuclear Science
December 1, 2011
Threshold-voltage shifts and increases in 1/f noise are observed in proton-irradiated AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device degradation. Quantum mechanical calculations demonstrate that low-energy recoils caused by particle interactions with defect complexes are more likely to occur than atomic displacements in a defect-free region of the crystal. We identify the responsible defects and their precursors in the defect-mediated displacement mechanism. The electronic properties of these defects are consistent with the increases in threshold voltage and 1/f noise in proton irradiation experiments. © 2011 IEEE.
Duke Scholars
Published In
IEEE Transactions on Nuclear Science
DOI
ISSN
0018-9499
Publication Date
December 1, 2011
Volume
58
Issue
6 PART 1
Start / End Page
2918 / 2924
Related Subject Headings
- Nuclear & Particles Physics
- 5106 Nuclear and plasma physics
- 0903 Biomedical Engineering
- 0299 Other Physical Sciences
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
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MLA
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Puzyrev, Y. S., Roy, T., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., & Pantelides, S. T. (2011). Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors. In IEEE Transactions on Nuclear Science (Vol. 58, pp. 2918–2924). https://doi.org/10.1109/TNS.2011.2170433
Puzyrev, Y. S., T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides. “Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors.” In IEEE Transactions on Nuclear Science, 58:2918–24, 2011. https://doi.org/10.1109/TNS.2011.2170433.
Puzyrev YS, Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors. In: IEEE Transactions on Nuclear Science. 2011. p. 2918–24.
Puzyrev, Y. S., et al. “Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors.” IEEE Transactions on Nuclear Science, vol. 58, no. 6 PART 1, 2011, pp. 2918–24. Scopus, doi:10.1109/TNS.2011.2170433.
Puzyrev YS, Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors. IEEE Transactions on Nuclear Science. 2011. p. 2918–2924.
Published In
IEEE Transactions on Nuclear Science
DOI
ISSN
0018-9499
Publication Date
December 1, 2011
Volume
58
Issue
6 PART 1
Start / End Page
2918 / 2924
Related Subject Headings
- Nuclear & Particles Physics
- 5106 Nuclear and plasma physics
- 0903 Biomedical Engineering
- 0299 Other Physical Sciences
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics