High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit.
Publication
, Journal Article
Harty, TP; Allcock, DTC; Ballance, CJ; Guidoni, L; Janacek, HA; Linke, NM; Stacey, DN; Lucas, DM
Published in: Physical review letters
November 2014
We implement all single-qubit operations with fidelities significantly above the minimum threshold required for fault-tolerant quantum computing, using a trapped-ion qubit stored in hyperfine "atomic clock" states of ^{43}Ca^{+}. We measure a combined qubit state preparation and single-shot readout fidelity of 99.93%, a memory coherence time of T_{2}^{*}=50 sec, and an average single-qubit gate fidelity of 99.9999%. These results are achieved in a room-temperature microfabricated surface trap, without the use of magnetic field shielding or dynamic decoupling techniques to overcome technical noise.
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Published In
Physical review letters
DOI
EISSN
1079-7114
ISSN
0031-9007
Publication Date
November 2014
Volume
113
Issue
22
Start / End Page
220501
Related Subject Headings
- General Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
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Harty, T. P., Allcock, D. T. C., Ballance, C. J., Guidoni, L., Janacek, H. A., Linke, N. M., … Lucas, D. M. (2014). High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit. Physical Review Letters, 113(22), 220501. https://doi.org/10.1103/physrevlett.113.220501
Harty, T. P., D. T. C. Allcock, C. J. Ballance, L. Guidoni, H. A. Janacek, N. M. Linke, D. N. Stacey, and D. M. Lucas. “High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit.” Physical Review Letters 113, no. 22 (November 2014): 220501. https://doi.org/10.1103/physrevlett.113.220501.
Harty TP, Allcock DTC, Ballance CJ, Guidoni L, Janacek HA, Linke NM, et al. High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit. Physical review letters. 2014 Nov;113(22):220501.
Harty, T. P., et al. “High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit.” Physical Review Letters, vol. 113, no. 22, Nov. 2014, p. 220501. Epmc, doi:10.1103/physrevlett.113.220501.
Harty TP, Allcock DTC, Ballance CJ, Guidoni L, Janacek HA, Linke NM, Stacey DN, Lucas DM. High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit. Physical review letters. 2014 Nov;113(22):220501.
Published In
Physical review letters
DOI
EISSN
1079-7114
ISSN
0031-9007
Publication Date
November 2014
Volume
113
Issue
22
Start / End Page
220501
Related Subject Headings
- General Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences