Buckley, J., Pro, T., Barattin, R., Calborean, A., Huang, K., Aiello, V., … De Salvo, B. (2009). From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices. In 2009 IEEE INTERNATIONAL MEMORY WORKSHOP (pp. 17-+).

Buckley, J., T. Pro, R. Barattin, A. Calborean, K. Huang, V. Aiello, G. Nicotra, et al. “From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices.” In 2009 IEEE INTERNATIONAL MEMORY WORKSHOP, 17-+, 2009.

Buckley J, Pro T, Barattin R, Calborean A, Huang K, Aiello V, et al. From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices. In: 2009 IEEE INTERNATIONAL MEMORY WORKSHOP. 2009. p. 17-+.

Buckley, J., et al. “From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices.” 2009 IEEE INTERNATIONAL MEMORY WORKSHOP, 2009, pp. 17-+.

Buckley J, Pro T, Barattin R, Calborean A, Huang K, Aiello V, Nicotra G, Gely M, Delapierre G, Jalaguier E, Duclairoir F, Chevalier N, Mariolle D, Spinella C, Lombardo S, Blaise P, Maldivi P, Ghibaudo G, Baptist R, De Salvo B. From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices. 2009 IEEE INTERNATIONAL MEMORY WORKSHOP. 2009. p. 17-+.