IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's
Publication
, Journal Article
Mishra, UK; Brown, AS; Jelloian, LM; Hackett, LH; Delaney, MJ
Published in: IEEE Transactions on Electron Devices
January 1, 1987
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1987
Volume
34
Issue
11
Start / End Page
2358
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Mishra, U. K., Brown, A. S., Jelloian, L. M., Hackett, L. H., & Delaney, M. J. (1987). IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices, 34(11), 2358. https://doi.org/10.1109/T-ED.1987.23250
Mishra, U. K., A. S. Brown, L. M. Jelloian, L. H. Hackett, and M. J. Delaney. “IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's.” IEEE Transactions on Electron Devices 34, no. 11 (January 1, 1987): 2358. https://doi.org/10.1109/T-ED.1987.23250.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices. 1987 Jan 1;34(11):2358.
Mishra, U. K., et al. “IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's.” IEEE Transactions on Electron Devices, vol. 34, no. 11, Jan. 1987, p. 2358. Scopus, doi:10.1109/T-ED.1987.23250.
Mishra UK, Brown AS, Jelloian LM, Hackett LH, Delaney MJ. IIA-6 High Performance Submicrometer AlInAs-GaInAs HEMT's. IEEE Transactions on Electron Devices. 1987 Jan 1;34(11):2358.
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1987
Volume
34
Issue
11
Start / End Page
2358
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering