
Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices
Publication
, Journal Article
Chang, AM; Owusu-Sekyere, K; Chang, TY
Published in: Solid State Communications
January 1, 1988
We have observed a tendency toward locking of the Aharonov-Bohm effect phase shift, in doubly connected, quasi-one-dimensional GaAsAlxGa1-xAs devices. The resistances of adjacent segments within a device exhibit periodic modulations, due to magnetic flux penetrating the area enclosed by the doubly connected geometry, which are phase-shifted from each other by a value of close to 180°. This phase shift value persists over a range of 200 periods (∼4kGauss in magnetic field), and is observed for various current-voltage configurations. © 1988.
Duke Scholars
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
January 1, 1988
Volume
67
Issue
11
Start / End Page
1027 / 1030
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Chang, A. M., Owusu-Sekyere, K., & Chang, T. Y. (1988). Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices. Solid State Communications, 67(11), 1027–1030. https://doi.org/10.1016/0038-1098(88)91179-9
Chang, A. M., K. Owusu-Sekyere, and T. Y. Chang. “Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices.” Solid State Communications 67, no. 11 (January 1, 1988): 1027–30. https://doi.org/10.1016/0038-1098(88)91179-9.
Chang AM, Owusu-Sekyere K, Chang TY. Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices. Solid State Communications. 1988 Jan 1;67(11):1027–30.
Chang, A. M., et al. “Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices.” Solid State Communications, vol. 67, no. 11, Jan. 1988, pp. 1027–30. Scopus, doi:10.1016/0038-1098(88)91179-9.
Chang AM, Owusu-Sekyere K, Chang TY. Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlx Ga1-x As heterostructure devices. Solid State Communications. 1988 Jan 1;67(11):1027–1030.

Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
January 1, 1988
Volume
67
Issue
11
Start / End Page
1027 / 1030
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics