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Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices

Publication ,  Journal Article
Chang, AM; Timp, G; Chang, TY; Cunningham, JE; Mankiewich, PM; Behringer, RE; Howard, RE
Published in: Solid State Communications
January 1, 1988
Published version (DOI)

We report the first observation of deviaton of the i=4 quantum Hall plateau from its quantized value, in narrow GaAs-AlxGa1-xAs quasi-1-d wires of width 2000A. The deviation arises in the form of aperiodic fluctuations as the magnetic field is varied, even though a deep minimum developes in longitudinal resistance. The fluctuation size grows with decreasing temperature and can be as large as 250Ω at 50mK. We suggest the observations arise from a combination of localization and Aharonov-Bohm quantum interference effects. © 1988.

Duke Scholars

Albert M. Chang
Author Albert M. Chang Physics

Published In

Solid State Communications

DOI

10.1016/0038-1098(88)90021-X

ISSN

0038-1098

Publication Date

January 1, 1988

Volume

67

Issue

8

Start / End Page

769 / 772

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics
 

Citation

APA
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ICMJE
MLA
NLM
Chang, A. M., Timp, G., Chang, T. Y., Cunningham, J. E., Mankiewich, P. M., Behringer, R. E., & Howard, R. E. (1988). Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices. Solid State Communications, 67(8), 769–772. https://doi.org/10.1016/0038-1098(88)90021-X
Chang, A. M., G. Timp, T. Y. Chang, J. E. Cunningham, P. M. Mankiewich, R. E. Behringer, and R. E. Howard. “Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices.” Solid State Communications 67, no. 8 (January 1, 1988): 769–72. https://doi.org/10.1016/0038-1098(88)90021-X.
Chang AM, Timp G, Chang TY, Cunningham JE, Mankiewich PM, Behringer RE, et al. Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices. Solid State Communications. 1988 Jan 1;67(8):769–72.
Chang, A. M., et al. “Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices.” Solid State Communications, vol. 67, no. 8, Jan. 1988, pp. 769–72. Scopus, doi:10.1016/0038-1098(88)90021-X.
Chang AM, Timp G, Chang TY, Cunningham JE, Mankiewich PM, Behringer RE, Howard RE. Deviation of the quantum hall effect from exact quantization in narrow GaAs-AlxGa1-xAs heterostructure devices. Solid State Communications. 1988 Jan 1;67(8):769–772.
Journal cover image

Published In

Solid State Communications

DOI

10.1016/0038-1098(88)90021-X

ISSN

0038-1098

Publication Date

January 1, 1988

Volume

67

Issue

8

Start / End Page

769 / 772

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics