Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices
Publication
, Journal Article
Chang, AM; Timp, G; Chang, TY; Cunningham, JE; Mankiewich, PM; Behringer, RE; Howard, RE
Published in: Solid State Communications
January 1, 1988
We report the first observation of deviaton of the i=4 quantum Hall plateau from its quantized value, in narrow GaAs-AlxGa1-xAs quasi-1-d wires of width 2000A. The deviation arises in the form of aperiodic fluctuations as the magnetic field is varied, even though a deep minimum developes in longitudinal resistance. The fluctuation size grows with decreasing temperature and can be as large as 250Ω at 50mK. We suggest the observations arise from a combination of localization and Aharonov-Bohm quantum interference effects. © 1988.
Duke Scholars
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
January 1, 1988
Volume
67
Issue
8
Start / End Page
769 / 772
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Chang, A. M., Timp, G., Chang, T. Y., Cunningham, J. E., Mankiewich, P. M., Behringer, R. E., & Howard, R. E. (1988). Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices. Solid State Communications, 67(8), 769–772. https://doi.org/10.1016/0038-1098(88)90021-X
Chang, A. M., G. Timp, T. Y. Chang, J. E. Cunningham, P. M. Mankiewich, R. E. Behringer, and R. E. Howard. “Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices.” Solid State Communications 67, no. 8 (January 1, 1988): 769–72. https://doi.org/10.1016/0038-1098(88)90021-X.
Chang AM, Timp G, Chang TY, Cunningham JE, Mankiewich PM, Behringer RE, et al. Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices. Solid State Communications. 1988 Jan 1;67(8):769–72.
Chang, A. M., et al. “Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices.” Solid State Communications, vol. 67, no. 8, Jan. 1988, pp. 769–72. Scopus, doi:10.1016/0038-1098(88)90021-X.
Chang AM, Timp G, Chang TY, Cunningham JE, Mankiewich PM, Behringer RE, Howard RE. Deviation of the quantum hall effect from exact quantization in narrow GaAs-Alx Ga1-x As heterostructure devices. Solid State Communications. 1988 Jan 1;67(8):769–772.
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
January 1, 1988
Volume
67
Issue
8
Start / End Page
769 / 772
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics