Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy
Publication
, Journal Article
Tsang, WT; Chang, AM; Ditzenberger, JA; Tabatabaie, N
Published in: Applied Physics Letters
December 1, 1986
Shubnikov-de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two-dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov-de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1986
Volume
49
Issue
15
Start / End Page
960 / 962
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Tsang, W. T., Chang, A. M., Ditzenberger, J. A., & Tabatabaie, N. (1986). Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy. Applied Physics Letters, 49(15), 960–962. https://doi.org/10.1063/1.97495
Tsang, W. T., A. M. Chang, J. A. Ditzenberger, and N. Tabatabaie. “Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy.” Applied Physics Letters 49, no. 15 (December 1, 1986): 960–62. https://doi.org/10.1063/1.97495.
Tsang WT, Chang AM, Ditzenberger JA, Tabatabaie N. Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy. Applied Physics Letters. 1986 Dec 1;49(15):960–2.
Tsang, W. T., et al. “Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy.” Applied Physics Letters, vol. 49, no. 15, Dec. 1986, pp. 960–62. Scopus, doi:10.1063/1.97495.
Tsang WT, Chang AM, Ditzenberger JA, Tabatabaie N. Two-dimensional electron gas in a Ga0.47 In0.53 As/InP heterojunction grown by chemical beam epitaxy. Applied Physics Letters. 1986 Dec 1;49(15):960–962.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1986
Volume
49
Issue
15
Start / End Page
960 / 962
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences