Point defects and diffusion in silicon and gallium arsenide
Publication
, Journal Article
Gosele, U; Tan, TY
Published in: Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein)
1988
Point defects and diffusion mechanisms in silicon and gallium arsenide are discussed with special emphasis on charge and non-equilibrium effects. For understanding diffusion processes in silicon and in GaAs both vacancies and self-interstitials in various charge states have to be taken into account. Results on dopant-enhanced intermixing of GaAs/AlGaAs superlattices make it possible to draw conclusions on the diffusion mechanisms of Ga, Be and Zn in GaAs
Duke Scholars
Published In
Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein)
Publication Date
1988
Volume
A59
Start / End Page
1 / 16
Citation
APA
Chicago
ICMJE
MLA
NLM
Gosele, U., & Tan, T. Y. (1988). Point defects and diffusion in silicon and gallium arsenide. Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), A59, 1–16.
Gosele, U., and T. Y. Tan. “Point defects and diffusion in silicon and gallium arsenide.” Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein) A59 (1988): 1–16.
Gosele U, Tan TY. Point defects and diffusion in silicon and gallium arsenide. Diffus Defect Data, Solid State Data A, Defect Diffus Forum (Liechtenstein). 1988;A59:1–16.
Gosele, U., and T. Y. Tan. “Point defects and diffusion in silicon and gallium arsenide.” Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), vol. A59, 1988, pp. 1–16.
Gosele U, Tan TY. Point defects and diffusion in silicon and gallium arsenide. Diffus Defect Data, Solid State Data A, Defect Diffus Forum (Liechtenstein). 1988;A59:1–16.
Published In
Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein)
Publication Date
1988
Volume
A59
Start / End Page
1 / 16