Carbon precipitation in silicon: Why is it so difficult
Publication
, Journal Article
Taylor, WJ; Tan, TY; Gösele, U
Published in: Applied Physics Letters
December 1, 1993
It is well-established that oxygen precipitation in silicon occurs readily and is further facilitated by the presence of carbon. In contrast, carbon precipitation in silicon appears to be a difficult process which takes place only in the presence of a sufficiently high supersaturation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the volume decrease associated with carbon precipitation or agglomeration allows one to understand the precipitation behavior of carbon in silicon.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
25
Start / End Page
3336 / 3338
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
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Taylor, W. J., Tan, T. Y., & Gösele, U. (1993). Carbon precipitation in silicon: Why is it so difficult. Applied Physics Letters, 62(25), 3336–3338. https://doi.org/10.1063/1.109063
Taylor, W. J., T. Y. Tan, and U. Gösele. “Carbon precipitation in silicon: Why is it so difficult.” Applied Physics Letters 62, no. 25 (December 1, 1993): 3336–38. https://doi.org/10.1063/1.109063.
Taylor WJ, Tan TY, Gösele U. Carbon precipitation in silicon: Why is it so difficult. Applied Physics Letters. 1993 Dec 1;62(25):3336–8.
Taylor, W. J., et al. “Carbon precipitation in silicon: Why is it so difficult.” Applied Physics Letters, vol. 62, no. 25, Dec. 1993, pp. 3336–38. Scopus, doi:10.1063/1.109063.
Taylor WJ, Tan TY, Gösele U. Carbon precipitation in silicon: Why is it so difficult. Applied Physics Letters. 1993 Dec 1;62(25):3336–3338.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
25
Start / End Page
3336 / 3338
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences