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Characterization of semiconductor silicon by transmission electron microscopy

Publication ,  Journal Article
Tan, TY
Published in: Proceedings of SPIE - The International Society for Optical Engineering
May 10, 1984

In this review some basics of the transmission electron microscopy, the instrument, its operations and the types of scientific information obtainable from crystalline materials are first discussed and then some subjects pertaining to recent characterization of silicon are discussed. The subjects chosen are those that had outstanding impacts in technology and/or in science for which studies using the transmission electron microscope forms an indispen- sible part of the characterization efforts. © 1984 SPIE.

Duke Scholars

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

EISSN

1996-756X

ISSN

0277-786X

Publication Date

May 10, 1984

Volume

452

Start / End Page

170 / 176

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
 

Citation

APA
Chicago
ICMJE
MLA
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Tan, T. Y. (1984). Characterization of semiconductor silicon by transmission electron microscopy. Proceedings of SPIE - The International Society for Optical Engineering, 452, 170–176. https://doi.org/10.1117/12.939302
Tan, T. Y. “Characterization of semiconductor silicon by transmission electron microscopy.” Proceedings of SPIE - The International Society for Optical Engineering 452 (May 10, 1984): 170–76. https://doi.org/10.1117/12.939302.
Tan TY. Characterization of semiconductor silicon by transmission electron microscopy. Proceedings of SPIE - The International Society for Optical Engineering. 1984 May 10;452:170–6.
Tan, T. Y. “Characterization of semiconductor silicon by transmission electron microscopy.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 452, May 1984, pp. 170–76. Scopus, doi:10.1117/12.939302.
Tan TY. Characterization of semiconductor silicon by transmission electron microscopy. Proceedings of SPIE - The International Society for Optical Engineering. 1984 May 10;452:170–176.

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

EISSN

1996-756X

ISSN

0277-786X

Publication Date

May 10, 1984

Volume

452

Start / End Page

170 / 176

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering