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Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions

Publication ,  Journal Article
Tan, TY
Published in: Applied Physics Letters
January 1, 1979

Faint residual fringe contrast was observed in some regions of stacking faults (SF) in Si for which unfaulting reactions had apparently occurred. This phenomenon is attributed to an error which occurred in the apparent unfaulting process. Such an error produces, for the simplest case, a four-atom-layer-thick region on the {111} which was twinned and may also be regarded as normal {111} layers of matrix material containing an intrinsic-extrinsic SF pair. Thus, no normal SF contrast was observed; instead, the small twin boundary dilations produced the SF-like faint fringe contrast. Twin reflections were observed from such material regions.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 1, 1979

Volume

34

Issue

10

Start / End Page

714 / 716

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Tan, T. Y. (1979). Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions. Applied Physics Letters, 34(10), 714–716. https://doi.org/10.1063/1.90616
Tan, T. Y. “Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions.” Applied Physics Letters 34, no. 10 (January 1, 1979): 714–16. https://doi.org/10.1063/1.90616.
Tan TY. Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions. Applied Physics Letters. 1979 Jan 1;34(10):714–6.
Tan, T. Y. “Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions.” Applied Physics Letters, vol. 34, no. 10, Jan. 1979, pp. 714–16. Scopus, doi:10.1063/1.90616.
Tan TY. Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions. Applied Physics Letters. 1979 Jan 1;34(10):714–716.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 1, 1979

Volume

34

Issue

10

Start / End Page

714 / 716

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences