Oxide precipitation at silicon grain boundaries
Publication
, Journal Article
Schroer, E; Hopfe, S; Werner, P; Gösele, U; Duscher, G; Rühle, M; Tan, TY
Published in: Applied Physics Letters
January 20, 1997
Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 20, 1997
Volume
70
Issue
3
Start / End Page
327 / 329
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
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Schroer, E., Hopfe, S., Werner, P., Gösele, U., Duscher, G., Rühle, M., & Tan, T. Y. (1997). Oxide precipitation at silicon grain boundaries. Applied Physics Letters, 70(3), 327–329. https://doi.org/10.1063/1.118405
Schroer, E., S. Hopfe, P. Werner, U. Gösele, G. Duscher, M. Rühle, and T. Y. Tan. “Oxide precipitation at silicon grain boundaries.” Applied Physics Letters 70, no. 3 (January 20, 1997): 327–29. https://doi.org/10.1063/1.118405.
Schroer E, Hopfe S, Werner P, Gösele U, Duscher G, Rühle M, et al. Oxide precipitation at silicon grain boundaries. Applied Physics Letters. 1997 Jan 20;70(3):327–9.
Schroer, E., et al. “Oxide precipitation at silicon grain boundaries.” Applied Physics Letters, vol. 70, no. 3, Jan. 1997, pp. 327–29. Scopus, doi:10.1063/1.118405.
Schroer E, Hopfe S, Werner P, Gösele U, Duscher G, Rühle M, Tan TY. Oxide precipitation at silicon grain boundaries. Applied Physics Letters. 1997 Jan 20;70(3):327–329.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 20, 1997
Volume
70
Issue
3
Start / End Page
327 / 329
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences