Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon
Publication
, Journal Article
Tan, TY; Ginsberg, BJ
Published in: Applied Physics Letters
December 1, 1983
An experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self-interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1983
Volume
42
Issue
5
Start / End Page
448 / 450
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., & Ginsberg, B. J. (1983). Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon. Applied Physics Letters, 42(5), 448–450. https://doi.org/10.1063/1.93966
Tan, T. Y., and B. J. Ginsberg. “Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon.” Applied Physics Letters 42, no. 5 (December 1, 1983): 448–50. https://doi.org/10.1063/1.93966.
Tan TY, Ginsberg BJ. Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon. Applied Physics Letters. 1983 Dec 1;42(5):448–50.
Tan, T. Y., and B. J. Ginsberg. “Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon.” Applied Physics Letters, vol. 42, no. 5, Dec. 1983, pp. 448–50. Scopus, doi:10.1063/1.93966.
Tan TY, Ginsberg BJ. Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon. Applied Physics Letters. 1983 Dec 1;42(5):448–450.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1983
Volume
42
Issue
5
Start / End Page
448 / 450
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences