Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon
Publication
, Journal Article
Tan, TY
Published in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
1986
The author describes in some detail, the nature of an exigent-accommodation-volume factor associated with oxygen (Oi) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO2 precipitate nucleation and growth phenomena. Employing this factor, he then describes the possible explanations of two outstanding features of Oi precipitation in CZ Si the precipitation retardation/recovery phenomena and the nucleation incubation phenomena
Duke Scholars
Published In
Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
Publication Date
1986
Start / End Page
269 / 279
Location
Boston, MA, USA
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y. (1986). Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 269–279.
Tan, T. Y. “Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, 269–79.
Tan TY. Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 1986;269–79.
Tan, T. Y. “Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon.” Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, 1986, pp. 269–79.
Tan TY. Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 1986;269–279.
Published In
Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon
Publication Date
1986
Start / End Page
269 / 279
Location
Boston, MA, USA