High-Power V-Band AlInAs/GaInAs on InP HEMT's
Publication
, Journal Article
Matloubian, M; Brown, AS; Nguyen, LD; Melendes, MA; Larson, LE; Delaney, MJ; Pence, JE; Rhodes, RA; Thompson, MA; Henige, JA
Published in: IEEE Electron Device Letters
January 1, 1993
We report on the dc and RF performance of δ-doped channel AlInAs/GaInAs on InP power HEMT's. A 450-μm-wide device with a gate length of 0.22 μm has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMT's for high-power applications in addition to low-noise applications at V band. © 1993 IEEE
Duke Scholars
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1993
Volume
14
Issue
4
Start / End Page
188 / 189
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Matloubian, M., Brown, A. S., Nguyen, L. D., Melendes, M. A., Larson, L. E., Delaney, M. J., … Henige, J. A. (1993). High-Power V-Band AlInAs/GaInAs on InP HEMT's. IEEE Electron Device Letters, 14(4), 188–189. https://doi.org/10.1109/55.215155
Matloubian, M., A. S. Brown, L. D. Nguyen, M. A. Melendes, L. E. Larson, M. J. Delaney, J. E. Pence, R. A. Rhodes, M. A. Thompson, and J. A. Henige. “High-Power V-Band AlInAs/GaInAs on InP HEMT's.” IEEE Electron Device Letters 14, no. 4 (January 1, 1993): 188–89. https://doi.org/10.1109/55.215155.
Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, et al. High-Power V-Band AlInAs/GaInAs on InP HEMT's. IEEE Electron Device Letters. 1993 Jan 1;14(4):188–9.
Matloubian, M., et al. “High-Power V-Band AlInAs/GaInAs on InP HEMT's.” IEEE Electron Device Letters, vol. 14, no. 4, Jan. 1993, pp. 188–89. Scopus, doi:10.1109/55.215155.
Matloubian M, Brown AS, Nguyen LD, Melendes MA, Larson LE, Delaney MJ, Pence JE, Rhodes RA, Thompson MA, Henige JA. High-Power V-Band AlInAs/GaInAs on InP HEMT's. IEEE Electron Device Letters. 1993 Jan 1;14(4):188–189.
Published In
IEEE Electron Device Letters
DOI
EISSN
1558-0563
ISSN
0741-3106
Publication Date
January 1, 1993
Volume
14
Issue
4
Start / End Page
188 / 189
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering