InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications
Publication
, Journal Article
Yi, C; Kim, TH; Brown, AS
Published in: Journal of Electronic Materials
January 1, 2002
The InP-based AlInAs-GaAsSb-GaInAs heterojunction bipolar transistors (HBTs) have been grown by solid-source molecular-beam epitaxy (SSMBE). Since the AlInAs-GaAsSb heterojunction has a type-II (staggered) band lineup, the conduction-band discontinuity is negligible at 300 K (10 meV). Thus, the turn-on voltage is significantly lower than that of an AlInAs-GaInAs HBT even without compositional grading of the emitter-base junction. A self-aligned process was used to fabricate large area devices. The measured turn-on voltage and collector-emitter offset were 0.36 V and 0.23 V, respectively, with a DC gain of approximately 25 and ideality factors of ηC = 1.01 and ηB = 1.1 at JC = 10 kA/cm2 collector-current density.
Duke Scholars
Published In
Journal of Electronic Materials
DOI
ISSN
0361-5235
Publication Date
January 1, 2002
Volume
31
Issue
2
Start / End Page
95 / 98
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Yi, C., Kim, T. H., & Brown, A. S. (2002). InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications. Journal of Electronic Materials, 31(2), 95–98. https://doi.org/10.1007/s11664-002-0153-0
Yi, C., T. H. Kim, and A. S. Brown. “InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications.” Journal of Electronic Materials 31, no. 2 (January 1, 2002): 95–98. https://doi.org/10.1007/s11664-002-0153-0.
Yi C, Kim TH, Brown AS. InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications. Journal of Electronic Materials. 2002 Jan 1;31(2):95–8.
Yi, C., et al. “InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications.” Journal of Electronic Materials, vol. 31, no. 2, Jan. 2002, pp. 95–98. Scopus, doi:10.1007/s11664-002-0153-0.
Yi C, Kim TH, Brown AS. InP-based AlInAs/GaAs0.51 Sb0.49 /GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applications. Journal of Electronic Materials. 2002 Jan 1;31(2):95–98.
Published In
Journal of Electronic Materials
DOI
ISSN
0361-5235
Publication Date
January 1, 2002
Volume
31
Issue
2
Start / End Page
95 / 98
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics