Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology

Fifteen-stage ring oscillators and static flip-flop frequency dividers have been fabricated with 0.2-μm gate-length AlInAs/GalnAs HEMI technology. The fabricated HEMT devices within the circuits demonstrated a gm of 750 mS/mm and a full channel current of 850 mA/ mm. The measured fT of the device is 120 GHz. The shortest gate delay measured for buffered FET logic (BFL) ring oscillators at 300 K was 9.3 ps at 66.7 mW/gate (fanout = 1); fanout sensitivity was 1.5 ps per fanout. The shortest gate delay measured for capacitively enhanced logic (CEE) ring oscillators at 300 K was 6.0 ps at 23.8 mW/gate (fanout = 1) with a fanout sensitivity of 2.7 ps per fanout. The CEL gate delay reduced to less than 5.0 ps with 11.35-mW power dissipation when measured at 77 K. The highest operating frequency for the static dividers was 26.7 GHz at 73.1 mW and 300 K. © 1988 IEEE.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering