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Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces

Publication ,  Journal Article
Hu, YP; Petroff, PM; Qian, X; Brown, AS
Published in: Applied Physics Letters
January 1, 1988
Published version (DOI)

The effects of substrate misorientation on the interface quality of Ga 0.47In0.53As/Al0.48In0.52As quantum well structures grown by molecular beam epitaxy lattice matched on InP substrates have been investigated. Transmission electron microscopy and low-temperature (15 K) cathodoluminescence spectra have been used to characterize the GaInAs/AlInAs layers and analyze the effects of nucleation and growth kinetics on the heterojunction interface quality. The quantum well luminescence line shape correlates with the presence of compositional fluctuations in the AlInAs layers and thickness variations of the quantum wells for structures deposited on misoriented substrates. Rapid thermal annealing of these samples improves the quantum well luminescence characteristics.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.100280

ISSN

0003-6951

Publication Date

January 1, 1988

Volume

53

Issue

22

Start / End Page

2194 / 2196

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Hu, Y. P., Petroff, P. M., Qian, X., & Brown, A. S. (1988). Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces. Applied Physics Letters, 53(22), 2194–2196. https://doi.org/10.1063/1.100280
Hu, Y. P., P. M. Petroff, X. Qian, and A. S. Brown. “Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces.” Applied Physics Letters 53, no. 22 (January 1, 1988): 2194–96. https://doi.org/10.1063/1.100280.
Hu YP, Petroff PM, Qian X, Brown AS. Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces. Applied Physics Letters. 1988 Jan 1;53(22):2194–6.
Hu, Y. P., et al. “Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces.” Applied Physics Letters, vol. 53, no. 22, Jan. 1988, pp. 2194–96. Scopus, doi:10.1063/1.100280.
Hu YP, Petroff PM, Qian X, Brown AS. Substrate misorientation effects on the structure and electronic properties of GaInAs-AlInAs interfaces. Applied Physics Letters. 1988 Jan 1;53(22):2194–2196.

Published In

Applied Physics Letters

DOI

10.1063/1.100280

ISSN

0003-6951

Publication Date

January 1, 1988

Volume

53

Issue

22

Start / End Page

2194 / 2196

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences