Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon
Publication
, Journal Article
Schramm, JE; Hu, EL; Merz, JL; Brown, JJ; Melendes, MA; Thompson, MA; Brown, AS
Published in: J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
1993
The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selective etch process was applied to the gate recess of a high electron mobility transistor device, and preliminary device measurements were made
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Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1993
Volume
11
Issue
6
Start / End Page
2280 / 2283
Location
San Diego, CA, USA
Related Subject Headings
- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences
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Schramm, J. E., Hu, E. L., Merz, J. L., Brown, J. J., Melendes, M. A., Thompson, M. A., & Brown, A. S. (1993). Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), 11(6), 2280–2283. https://doi.org/10.1116/1.586890
Schramm, J. E., E. L. Hu, J. L. Merz, J. J. Brown, M. A. Melendes, M. A. Thompson, and A. S. Brown. “Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA) 11, no. 6 (1993): 2280–83. https://doi.org/10.1116/1.586890.
Schramm JE, Hu EL, Merz JL, Brown JJ, Melendes MA, Thompson MA, et al. Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(6):2280–3.
Schramm, J. E., et al. “Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon.” J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11, no. 6, 1993, pp. 2280–83. Manual, doi:10.1116/1.586890.
Schramm JE, Hu EL, Merz JL, Brown JJ, Melendes MA, Thompson MA, Brown AS. Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. J Vac Sci Technol B, Microelectron Process Phenom (USA). 1993;11(6):2280–2283.
Published In
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA)
DOI
Publication Date
1993
Volume
11
Issue
6
Start / End Page
2280 / 2283
Location
San Diego, CA, USA
Related Subject Headings
- Applied Physics
- 0912 Materials Engineering
- 0901 Aerospace Engineering
- 0401 Atmospheric Sciences