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Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets

Publication ,  Journal Article
Palmateer, LF; Tasker, PJ; Itoh, T; Brown, AS; Wicks, GW; Eastman, LF
Published in: Electronics Letters
January 1, 1987

We report microwave characterisation of nominally 1 μM gate Al0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors MODFETs). The Al0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2 μM-gate MODFET. © 1987, The Institution of Electrical Engineers. All rights reserved.

Duke Scholars

Published In

Electronics Letters

DOI

ISSN

0013-5194

Publication Date

January 1, 1987

Volume

23

Issue

1

Start / End Page

53 / 55

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering
  • 0801 Artificial Intelligence and Image Processing
 

Citation

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Palmateer, L. F., Tasker, P. J., Itoh, T., Brown, A. S., Wicks, G. W., & Eastman, L. F. (1987). Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets. Electronics Letters, 23(1), 53–55. https://doi.org/10.1049/el:19870039
Palmateer, L. F., P. J. Tasker, T. Itoh, A. S. Brown, G. W. Wicks, and L. F. Eastman. “Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets.” Electronics Letters 23, no. 1 (January 1, 1987): 53–55. https://doi.org/10.1049/el:19870039.
Palmateer LF, Tasker PJ, Itoh T, Brown AS, Wicks GW, Eastman LF. Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets. Electronics Letters. 1987 Jan 1;23(1):53–5.
Palmateer, L. F., et al. “Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets.” Electronics Letters, vol. 23, no. 1, Jan. 1987, pp. 53–55. Scopus, doi:10.1049/el:19870039.
Palmateer LF, Tasker PJ, Itoh T, Brown AS, Wicks GW, Eastman LF. Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets. Electronics Letters. 1987 Jan 1;23(1):53–55.

Published In

Electronics Letters

DOI

ISSN

0013-5194

Publication Date

January 1, 1987

Volume

23

Issue

1

Start / End Page

53 / 55

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering
  • 0801 Artificial Intelligence and Image Processing