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Arsenic incorporation in InAsP/InP quantum wells

Journal articles  - Journal Article
Dagnall, G; Brown, AS; Stock, SR
Published in: Journal of Electronic Materials
January 1, 1999
Published version (DOI)

InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420-535 °C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation.

Duke Scholars

April S. Brown
Author April S. Brown Pierre R. Lamond Department of Electrical and Computer Engin ...
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Published In

Journal of Electronic Materials

DOI

10.1007/s11664-999-0246-0

ISSN

0361-5235

Publication Date

January 1, 1999

Volume

28

Issue

10

Start / End Page

1108 / 1110

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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Dagnall, G., Brown, A. S., & Stock, S. R. (1999). Arsenic incorporation in InAsP/InP quantum wells. Journal of Electronic Materials, 28(10), 1108–1110. https://doi.org/10.1007/s11664-999-0246-0
Dagnall, G., A. S. Brown, and S. R. Stock. “Arsenic incorporation in InAsP/InP quantum wells.” Journal of Electronic Materials 28, no. 10 (January 1, 1999): 1108–10. https://doi.org/10.1007/s11664-999-0246-0.
Dagnall G, Brown AS, Stock SR. Arsenic incorporation in InAsP/InP quantum wells. Journal of Electronic Materials. 1999 Jan 1;28(10):1108–10.
Dagnall, G., et al. “Arsenic incorporation in InAsP/InP quantum wells.” Journal of Electronic Materials, vol. 28, no. 10, Jan. 1999, pp. 1108–10. Scopus, doi:10.1007/s11664-999-0246-0.
Dagnall G, Brown AS, Stock SR. Arsenic incorporation in InAsP/InP quantum wells. Journal of Electronic Materials. 1999 Jan 1;28(10):1108–1110.
Journal cover image

Published In

Journal of Electronic Materials

DOI

10.1007/s11664-999-0246-0

ISSN

0361-5235

Publication Date

January 1, 1999

Volume

28

Issue

10

Start / End Page

1108 / 1110

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics