Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN
Publication
, Journal Article
Bruno, G; Losurdo, M; Giangregorio, MM; Capezzuto, P; Brown, AS; Kim, T-H; Choi, S
Published in: Applied Surface Science
2006
GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. © 2006 Elsevier B.V. All rights reserved.
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Published In
Applied Surface Science
DOI
Publication Date
2006
Volume
253
Issue
1 SPEC ISS
Start / End Page
219 / 223
Related Subject Headings
- Applied Physics
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Chicago
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Bruno, G., Losurdo, M., Giangregorio, M. M., Capezzuto, P., Brown, A. S., Kim, T.-H., & Choi, S. (2006). Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science, 253(1 SPEC ISS), 219–223. https://doi.org/10.1016/j.apsusc.2006.05.129
Bruno, Giovanni, Maria Losurdo, Maria M. Giangregorio, Pio Capezzuto, April S. Brown, Tong-Ho Kim, and Soojeong Choi. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science 253, no. 1 SPEC ISS (2006): 219–23. https://doi.org/10.1016/j.apsusc.2006.05.129.
Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim T-H, et al. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006;253(1 SPEC ISS):219–23.
Bruno, Giovanni, et al. “Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN.” Applied Surface Science, vol. 253, no. 1 SPEC ISS, 2006, pp. 219–23. Manual, doi:10.1016/j.apsusc.2006.05.129.
Bruno G, Losurdo M, Giangregorio MM, Capezzuto P, Brown AS, Kim T-H, Choi S. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN. Applied Surface Science. 2006;253(1 SPEC ISS):219–223.
Published In
Applied Surface Science
DOI
Publication Date
2006
Volume
253
Issue
1 SPEC ISS
Start / End Page
219 / 223
Related Subject Headings
- Applied Physics